FDPC5030SG QFN8 MOSFET
спецификация:
- тип продукта: Dual N-Channel Asymmetric POWERTRENCH
- корпус: QFN8
- 30V
- Max RDS (on) = 5.0 m at VGS = 10 V, ID = 17 a
- Max RDS (on) = 6.5 m at VGS = 4.5 V, ID = 14 a
- Max RDS (on) = 2.4 m at VGS = 10 V, ID = 25 a
- Max RDS (on) = 3.0 m at VGS = 4.5 V, ID = 22 A
Q1: N-Channel
Q2: N-Channel
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